SPP6506 description applications the SPP6506 is the dual p-channel enhancement mode power field effect transistors are produced using high cell density , dmos trench technology. this high density process is especially tailored to minimize on-state resistance and provide superior switching performance. these devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. z power management in note book z portable equipment z battery powered system z dc/dc converter z load switch z dsc z lcd display inverter features pin configuration( sot-23-6l ) part marking ? p-channel -30v/-2.8a,r ds(on) =105m ? @v gs =- 10v -30v/-2.5a,r ds(on) =135m ? @v gs =-4.5v ? super high density cell design for extremely low rds (on) ? exceptional on-resistance and maximum dc current capability ? sot-23-6l package design product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
pin description pin symbol description 1 g1 gate 1 2 s2 source 2 3 g2 gate 2 4 d2 drain 2 5 s1 source 1 6 d1 drain1 ordering information part number package part marking SPP6506s26rg sot-23- 6l 06yw week code : a ~ z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) SPP6506s26rg : tape reel ; pb ? free absoulte maximum ratings (t a =25 unless otherwise noted) parameter symbol typical unit drain-source voltage v dss -30 v gate ?source voltage v gss 20 v t a =25 -2.8 continuous drain current(t j =150 ) t a =70 i d -2.1 a pulsed drain current i dm -8 a continuous source current(diode conduction) i s -1.4 a t a =25 1.15 power dissipation t a =70 p d 0.75 w operating junction temperature t j -55/150 storage temperature range t stg -55/150 t 10sec 52 thermal resistance-junction to ambient steady state r ja 90 /w SPP6506 product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (t a =25 unless otherwise noted) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =-250ua -30 gate threshold voltage v gs(th) v ds =v gs ,i d =-250ua -1.0 -3.0 v gate leakage current i gss v ds =0v,v gs =20v 100 na v ds =-24v,v gs =0v -1 zero gate voltage drain current i dss v ds =-24v,v gs =0v t j =55 -10 ua on-state drain current i d(on) v ds Q -5v,v gs =-10v -6 a v gs =- 10v,i d =-2.8a 0.088 0.105 drain-source on-resistance r ds(on) v gs =-4.5v,i d =-2.5a 0.118 0.135 ? forward transconductance gfs v ds =-10v,i d =-2.8a 4.0 s diode forward voltage v sd i s =-1.2a,v gs =0v -0.8 -1.2 v dynamic total gate charge q g 5.8 10 gate-source charge q gs 0.8 gate-drain charge q gd v ds =-15v,v gs =-10v i d -1.7a 1.5 nc input capacitance c iss 226 output capacitance c oss 87 reverse transfer capacitance c rss v ds =-15v,v gs =0v f=1mhz 19 pf t d(on) 9 20 turn-on time t r 9 20 t d(off) 18 35 turn-off time t f v dd =-15v,r l =15 ? i d -1.0a,v gen =-10v r g =6 ? 6 20 ns SPP6506 product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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